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ST1802FH
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s
s s s s s s
s
NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS NEW SERIES, ENHANCHED PERFORMANCE EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V ) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS FULLY MOLDED ISOLATED PACKAGE 2KV DC ISOLATION (U.L. COMPLIANT) CREEPAGE DISTANCE PATH > 4 mm
TO-220FH
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOR TV DESCRIPTION The device is manufactured using Diffused Collector Technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitt er-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction T emperature Value 1500 600 7 10 15 4 40 -65 to 150 150 Uni t V V V A A A W
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C C
August 2001
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THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 3.125
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 7 V I C = 100 mA L = 25 mH 600 Tj = 125 C
o
Min.
Typ .
Max. 1 2 1
Un it mA mA mA V
V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat ) V BE(s at) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain INDUCTIVE LOAD Storage Time Fall Time
IC = 4 A IC = 4 A I C = 4.5 A IC = 1 A IC = 5 A IC = 4 A L B = 5 H f = 16 KHz
IB = 0.8 A IB = 1.2 A IB = 1 A V CE = 5 V V CE = 5 V IBon (END) = 1 A V BB = -2.5 V 25 4 5 0.3
5 1.5 1.2
V V
9 6 0.5 s s
ts tf
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
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Derating Curve Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
DC Current Gain
Power Losses At 16 KHz
Switching Time Inductive Load
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Reverse Biased SOA
Inductive Load Switching Test Circuits.
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TO-220FH (Fully plastic High voltage) MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 L8 L9 15.9 9 14.5 2.4 28.6 9.8 3.4 16.4 9.3 15 0.626 0.354 0.570 0.094 4.4 2.5 2.5 0.45 0.75 1.3 1.3 4.95 2.4 10 16 30.6 10.6 1.126 0.385 0.134 0.645 0.366 0.590 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.8 1.8 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.051 0.051 0.195 0.094 0.393 0.630 1.204 0.417 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.070 0.070 0.204 0.106 0.409
P011W
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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